The high purity silicon nitride powder produced by our company is a special silicon nitride powder for high frequency packaging & photovoltaic release agent, prepared by the world's exclusive process, the β phase content can reach more than 99%, high purity, excellent morphology, good powder fluidity, high filling ratio, good thermal conductivity, excellent dielectric properties, can be widely used as a high thermal conductivity filler in high frequency packaging products.
The high-purity silicon nitride powder produced by our company has the characteristics of high purity and good dispersion, which can effectively improve the demudding effect and reduce the red zone of silicon ingot, and has been widely recognized by domestic photovoltaic enterprises.
The advantages of high-purity silicon nitride powder products are: high purity, small particle size, uniform distribution, large specific surface area, high surface activity, low loose density and excellent performance.
The high purity silicon nitride powder performance indicators:
Product Name | Silicon nitride ceramic powder | Product Type | DHG-GRXF-01 | |||
Test Item | Parameter Standard | Test Method | Actua Test | Test Standards | ||
α phase content (%) | ≥92 | X-ray Diffraction | 94.3 | JIS R1640 | ||
O(%) | ≤1.5 | Infrared Absorption Method | 1.32 | ASTM C1494 | ||
N(%) | ≥38.5 | Infrared Absorption Method | 38.9 | ASTM C1494 | ||
Size D50(um) | ≤10 | Laser Diffraction Method | 9.7 | GB/T 19077.1 | ||
Impurity composition (ppm) | Fe/ppm | ≤5 | ICP-AES Method | 374 | SG-GC-07.1-2009 | |
A1/ppm | ≤5 | ICP-AES Method | 231 | SG-GC-07.1-2009 | ||
Ca/ppm | ≤5 | ICP-AES Method | 306 | SG-GC-07.1-2009 |