Our silicon nitride high thermal conductivity powder adopts high purity silicon powder direct nitriding process, through the used silicon material, nitriding process and refining process of unique patented technology control, the preparation of high purity, high α phase content, uniform particle size distribution, high sintering activity of substrate grade silicon nitride special powder.
High-performance silicon nitride substrate special powder, no need to add sintering additives, substrate density up to 3.22g/cm3, thermal conductivity 90W/(m·K), bending strength 700MPa, fracture toughness 6.5MPa·m1/2, insulation voltage 18kV/mm, product quality has reached the international first-class level, has been highly recognized by industry leading customers.
The advantages of silicon nitride high thermal conductivity powder products: high strength, high hardness, high resistivity, good thermal shock resistance, low dielectric loss and low expansion coefficient.
Silicon nitride high thermal conductivity powder performance indicators:
Product Name | Silicon nitride ceramic powder | Product Type | DHG-GRXF-01 | |||
Test Item | Parameter Standard | Test Method | Actua Test | Test Standards | ||
α phase content (%) | ≥92 | X-ray Diffraction | 94.3 | JIS R1640 | ||
O(%) | ≤1.5 | Infrared Absorption Method | 1.32 | ASTM C1494 | ||
N(%) | ≥38.5 | Infrared Absorption Method | 38.9 | ASTM C1494 | ||
Size D50(um) | ≤10 | Laser Diffraction Method | 9.7 | GB/T 19077.1 | ||
Impurity composition (ppm) | Fe/ppm | ≤5 | ICP-AES Method | 374 | SG-GC-07.1-2009 | |
A1/ppm | ≤5 | ICP-AES Method | 231 | SG-GC-07.1-2009 | ||
Ca/ppm | ≤5 | ICP-AES Method | 306 | SG-GC-07.1-2009 |