Silicon nitride high thermal conductivity substrate

Application: New energy vehicles in rail transit. Performance characteristics: high heat dissipation, insulation, low thermal expansion coefficient of excellent performance.
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Silicon nitride high thermal conductivity substrates are suitable for use in high temperature environments, such as heat exchangers, combustion chamber linings or other areas where lightweight and high-strength materials are required. In addition, the chemical stability and low thermal expansion coefficient of silicon nitride make it also very useful in semiconductor manufacturing, especially when dealing with high-temperature processes. Their ultra-thin design not only reduces weight, but also allows for efficient use in compact Spaces, providing superior mechanical and thermal properties.


Product advantages of silicon nitride high thermal conductivity substrate:


Ultra-thin design: This design not only reduces the weight of the material, but also allows for efficient use in compact Spaces, increasing the flexibility and overall efficiency of the device design.


High mechanical strength and hardness: Silicon nitride's high hardness (1500 Hv0.5) and elastic modulus (290 GPa) ensure structural integrity and stability under extreme conditions.


Excellent thermal performance: Low coefficient of thermal expansion (3.1×10-6/℃) makes it stable in an environment with drastic temperature changes, suitable for use as the lining of heat exchangers and high temperature furnaces.


Chemical stability and corrosion resistance: Silicon nitride is highly resistant to a variety of chemicals and is suitable for use in chemical treatment environments.


Silicon nitride high thermal conductivity substrate performance indicators :

Parameters

Silicon nitride high thermal conductivity substrate

unit

Density/(g/cm³)

>3.2

g/cm³

Dimensions

190.5*138±0.05

mm

Thickness

0.32±0.02

mm

Camber

≤0.03%

mm

Surface roughness

≤0.7

μm

Thermal expansion coefficient

2.6~3.4

10-6K,40-400℃

Fracture toughness

6.0~7.0

Mpa.m1/2

Thermal Conductivity 

80~90

W/(m.K),25℃

Bending strength

>700

Mpa

Breakdown strength

>15

(KV.mm)

Dielectric constant

8

1Mhz

Volume Resistivity

>1014

Ω.cm,25℃


Applications area :

Heat exchanger

Using its high thermal conductivity and thermal stability, it is used as a separator in heat exchangers to improve energy efficiency and thermal management performance.


Combustion chamber lining

Used in high temperature environments such as combustion chambers to provide heat resistance and protection and extend equipment life.


Semiconductor manufacturing

Used in semiconductor manufacturing to protect and isolate sensitive components against thermal damage and chemical corrosion, especially when dealing with high-temperature processes.